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SGT65R65AL - STMicroelectronics

Description: 650 V, 49 mOhm typ., 25 A, e-mode PowerGaN transistor

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PCB Footprints
SGT65R65AL - STMicroelectronics PCB footprint - Other - Other - PowerFLAT 5x6 HV PowerGaN
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3D Models
SGT65R65AL - STMicroelectronics  - 3D model - Other - PowerFLAT 5x6 HV PowerGaN
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SGT65R65AL Details

  • Manufacturer Part Number:

    SGT65R65AL

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Additional Feature:

    BULK: 3000

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE WITH BUILT-IN KELVIN SENSOR

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.065 Ω

  • FET Technology:

    HIGH ELECTRON MOBILITY

  • Feedback Cap-Max (Crss):

    3 pF

  • JESD-30 Code:

    R-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    5 W

  • Power Dissipation-Max (Abs):

    305 W

  • Pulsed Drain Current-Max (IDM):

    70 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

SGT65R65AL Frequently Asked Questions (FAQs)

  • STMicroelectronics provides a recommended PCB layout in the application note AN5046, which includes guidelines for thermal vias, copper pours, and component placement to minimize thermal resistance and ensure reliable operation.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and ambient temperature (Ta). Additionally, consider using thermal interface materials, such as thermal pads or thermal grease, to improve heat transfer between the device and the heat sink.
  • While the datasheet specifies a maximum gate-source voltage (Vgs) of ±20V, it's essential to note that the absolute maximum rating is ±30V. However, to ensure reliable operation, it's recommended to keep the gate voltage within the specified range to avoid damage or degradation of the device.
  • To calculate the power dissipation of the SGT65R65AL, you need to consider the drain-source on-resistance (Rds(on)), the drain current (Id), and the voltage drop across the device. Use the following formula: Pd = Id^2 * Rds(on) + Vds * Id, where Vds is the drain-source voltage.
  • STMicroelectronics provides several gate drive circuit examples in the application note AN5046, including a bootstrap circuit, a totem pole circuit, and a dedicated gate driver IC. The choice of gate drive circuit depends on the specific application requirements, such as switching frequency, voltage, and current.

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SGT65R65AL Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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