SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
650 V
Drain Current-Max (ID):
32 A
Drain-source On Resistance-Max:
0.097 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
0.3 pF
JESD-30 Code:
R-PDSO-G9
JESD-609 Code:
e3
Moisture Sensitivity Level:
3
Number of Elements:
2
Number of Terminals:
9
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
245
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
208 W
Pulsed Drain Current-Max (IDM):
120 A
Reference Standard:
AEC-Q101
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn) - annealed
Terminal Form:
GULL WING
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
SH32N65DM6AG Frequently Asked Questions (FAQs)
The maximum operating temperature range for the SH32N65DM6AG is -40°C to 150°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade at extreme temperatures.
To ensure proper biasing, follow the recommended operating conditions and biasing schemes outlined in the datasheet. Typically, this involves connecting the gate to a voltage source, and the drain and source to the load and ground, respectively. Additionally, consider using a gate driver or bootstrap circuit to ensure proper voltage levels and minimize power losses.
The recommended gate resistance value for the SH32N65DM6AG is typically in the range of 1-10 ohms. However, the optimal value may vary depending on the specific application, switching frequency, and gate driver characteristics. It's essential to consult the datasheet and application notes for more detailed guidance.
To handle the SH32N65DM6AG's high voltage and current ratings, ensure that your design includes proper voltage and current limiting mechanisms, such as voltage regulators, current sensors, and overcurrent protection circuits. Additionally, follow proper PCB layout and thermal management practices to minimize voltage drops, electromagnetic interference, and thermal stress.
When paralleling multiple SH32N65DM6AG devices, consider the following key factors: ensure identical devices with the same lot number and date code, use a common gate driver and biasing scheme, and implement proper current sharing and balancing mechanisms to prevent uneven current distribution and thermal runaway.
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SH32N65DM6AG Overview
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About STMicroelectronics
STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components.
STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut
