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SH8KA4TB1 - ROHM Semiconductor

Description: 30V Nch+Nch Power MOSFET

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PCB Footprints
SH8KA4TB1 - ROHM Semiconductor PCB footprint - Small Outline Packages - Small Outline Packages - 8 lead sop
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3D Models
SH8KA4TB1 - ROHM Semiconductor  - 3D model - Small Outline Packages - 8 lead sop
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SH8KA4TB1 Details

  • Manufacturer Part Number:

    SH8KA4TB1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    4.6 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    0.0214 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    90 pF

  • JESD-30 Code:

    R-PDSO-G8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    18 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SH8KA4TB1 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for SH8KA4TB1 is -40°C to 125°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade if operated outside this range for extended periods.
  • To ensure proper soldering, follow the recommended soldering conditions and guidelines provided in the datasheet. Use a soldering iron with a temperature range of 350°C to 370°C, and apply a soldering flux suitable for lead-free soldering. Additionally, ensure the PCB is designed with a suitable land pattern and thermal relief to prevent thermal stress on the device.
  • The maximum allowable power dissipation for SH8KA4TB1 is dependent on the operating temperature and the thermal resistance of the PCB. According to the datasheet, the maximum power dissipation is 1.5W at an ambient temperature of 25°C. However, it's crucial to perform thermal analysis and simulation to determine the actual power dissipation limits for your specific application.
  • While the SH8KA4TB1 is a robust device, it's essential to consider the vibration tolerance in your specific application. ROHM Semiconductor recommends following the guidelines for vibration testing and simulation to ensure the device's reliability and performance in high-vibration environments. Additionally, consider using vibration-dampening materials and PCB design techniques to minimize the impact of vibrations on the device.
  • To prevent electrostatic discharge (ESD) damage, follow proper handling and storage procedures for the SH8KA4TB1. Use ESD-protective packaging, wrist straps, and mats during handling and assembly. Ensure the PCB design includes ESD protection circuits and components, such as TVS diodes or ESD-protection ICs, to protect the device from ESD events.

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SH8KA4TB1 Overview

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