Part Image

SH8KA7GZETB - ROHM Semiconductor

Description: 30V Nch+Nch Power MOSFET

Download SH8KA7GZETB Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SH8KA7GZETB - ROHM Semiconductor PCB footprint - Small Outline Packages - Small Outline Packages - 8 lead sop
click to zoom
3D Models
SH8KA7GZETB - ROHM Semiconductor  - 3D model - Small Outline Packages - 8 lead sop
click to zoom

SH8KA7GZETB Details

  • Manufacturer Part Number:

    SH8KA7GZETB

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    21 Weeks

  • Date Of Intro:

    2017-03-13

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    65.1 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain-source On Resistance-Max:

    0.0093 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SH8KA7GZETB Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the SH8KA7GZETB is -40°C to 125°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade if operated outside this range for extended periods.
  • To ensure proper power-on and power-off sequencing, follow the recommended power-up and power-down procedures outlined in the datasheet. This typically involves ramping up the power supply voltage slowly and ensuring that all input signals are stable before applying the power supply voltage.
  • The SH8KA7GZETB has a high power density, so thermal management is crucial. Ensure good thermal conductivity between the device and the PCB, use thermal vias, and consider heat sinks or thermal interface materials to keep the junction temperature within the recommended range.
  • The SH8KA7GZETB has built-in ESD protection, but it's still essential to follow proper ESD handling procedures during assembly, storage, and handling. Use ESD-safe materials, wrist straps, and mats to prevent damage from static electricity.
  • To minimize noise, ensure good signal integrity, and reduce electromagnetic interference (EMI), follow the recommended PCB layout guidelines in the datasheet. This includes keeping signal traces short, using ground planes, and avoiding parallel signal traces.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SH8KA7GZETB Overview

Use the download button to access the SH8KA7GZETB schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SH8KA, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SH8KA7GZETB

Showing 0 results