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SI1025X-T1-GE3 - Vishay

Description: SI1025X-T1-GE3 Dual P-Channel MOSFET, 135 mA, 60 V, 6-Pin SOT-523 Vishay

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SI1025X-T1-GE3 - Vishay PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - https://screenshots.firefox.com/6wzafPYfCRRsWzin/componentsearchengine.com
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SI1025X-T1-GE3 - Vishay  - 3D model - SO Transistor Flat Lead - https://screenshots.firefox.com/6wzafPYfCRRsWzin/componentsearchengine.com
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  • Datasheet Download Datasheet
  • Stock & Prices $ Price & Stock for SI1025X-T1-GE3
  • Part Number SI1025X-T1-GE3
  • Manufacturer Vishay
  • Pin Count 6
  • Part Category MOSFET (P-Channel)
  • Package Category SO Transistor Flat Lead
  • Footprint Name SO Transistor Flat Lead - https://screenshots.firefox.com/6wzafPYfCRRsWzin/componentsearchengine.com
  • Released Date Mar 13, 2019
  • Last Modified Date Jun 22, 2023 2:40 AM UTC
  • Pinout / Pin List Click Here (Member Only)

SI1025X-T1-GE3 Details

  • Manufacturer Part Number:

    SI1025X-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, MINIATURE, SC-89, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    LOW THRESHOLD

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.19 A

  • Drain-source On Resistance-Max:

    4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.25 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI1025X-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI1025X-T1-GE3 is a standard SOT23-6 package with a 1.3mm x 1.3mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for reliable soldering.
  • To ensure proper biasing, connect the VIN pin to a stable voltage source between 2.7V and 5.5V, and the EN pin to a logic-level signal (e.g., 0V or VIN) to enable or disable the device. Additionally, decouple the VIN pin with a 1uF ceramic capacitor to minimize noise.
  • The maximum allowable power dissipation for the SI1025X-T1-GE3 is 1.4W at an ambient temperature of 25°C. However, it's essential to consider the thermal resistance of the package (θJA = 125°C/W) and the PCB's thermal design to ensure reliable operation.
  • The SI1025X-T1-GE3 is rated for operation up to 125°C. However, the device's performance and reliability may degrade at higher temperatures. It's essential to consider the application's temperature profile and potential thermal stress when designing with this device.
  • To protect the SI1025X-T1-GE3 from ESD, handle the device by the body or pins, avoid touching the pins, and use an ESD wrist strap or mat during assembly. Additionally, ensure the PCB design includes ESD protection components, such as TVS diodes or ESD arrays, to prevent damage from external ESD events.

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SI1025X-T1-GE3 Overview

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