Part Image

SI1050X-T1-GE3 - Vishay

Description: Trans MOSFET N-CH 8V 1.34A 6-Pin Vishay SI1050X-T1-GE3 N-channel MOSFET Transistor, 1.34 A, 8 V, 6-Pin SC-89

Download SI1050X-T1-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SI1050X-T1-GE3 - Vishay PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - SC89: 6-LEADS (SOT-563F)_1
click to zoom
3D Models
SI1050X-T1-GE3 - Vishay  - 3D model - SO Transistor Flat Lead - SC89: 6-LEADS (SOT-563F)_1
click to zoom

SI1050X-T1-GE3 Details

  • Manufacturer Part Number:

    SI1050X-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, SC-89, 6 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    8 V

  • Drain Current-Max (ID):

    1.34 A

  • Drain-source On Resistance-Max:

    0.086 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.236 W

  • Pulsed Drain Current-Max (IDM):

    6 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI1050X-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI1050X-T1-GE3 is a standard SOT23-6 package with a 1.6mm x 1.6mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for reliable soldering.
  • To ensure proper biasing, connect the VIN pin to a stable voltage source between 2.5V and 5.5V, and the VOUT pin to a load or a voltage regulator. The EN pin should be tied to VIN or a logic signal for enable/disable functionality.
  • The maximum allowed power dissipation for the SI1050X-T1-GE3 is 1.4W at an ambient temperature of 25°C. However, it's recommended to derate the power dissipation based on the operating temperature and PCB design.
  • The SI1050X-T1-GE3 is rated for operation up to 125°C. However, the device's performance and reliability may degrade at high temperatures. It's recommended to consult the datasheet and application notes for thermal management guidelines.
  • To prevent ESD damage, handle the SI1050X-T1-GE3 with an anti-static wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device's pins or handling it in environments with high electrostatic charges.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SI1050X-T1-GE3 Overview

Use the download button to access the SI1050X-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI105, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SI1050X-T1-GE3

Showing 0 results