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SI1070X-T1-GE3 - Vishay

Description: Vishay SI1070X-T1-GE3 N-channel MOSFET Transistor, 1.2 A, 30 V, 6-Pin SC-89

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Symbol
SI1070X-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI1070X-T1-GE3 - Vishay PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - SC-89 6-Leads (SOT-563F)
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3D Models
SI1070X-T1-GE3 - Vishay - 3D model - SO Transistor Flat Lead - SC-89 6-Leads (SOT-563F)
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SI1070X-T1-GE3 Details

  • Manufacturer Part Number:

    SI1070X-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, SC-89, 6 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    1.2 A

  • Drain-source On Resistance-Max:

    0.099 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.236 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI1070X-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI1070X-T1-GE3 is a 0603 package with a land pattern of 0.8mm x 0.8mm. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent overheating.
  • To ensure reliability in high-temperature applications, it's crucial to follow the recommended derating curves for the device. Additionally, ensure proper thermal management, such as using a heat sink or thermal interface material, to keep the junction temperature below the maximum rated temperature of 150°C.
  • The maximum allowable voltage for the SI1070X-T1-GE3 is 100V. Exceeding this voltage may result in permanent damage to the device. It's essential to ensure that the voltage rating is not exceeded in the application.
  • To prevent electrostatic discharge (ESD) damage, handle the SI1070X-T1-GE3 with ESD-protective equipment, such as wrist straps or mats. Ensure that the workspace and tools are grounded, and avoid touching the device's pins or leads.
  • The typical lead time for the SI1070X-T1-GE3 varies depending on the region, distributor, and availability. It's recommended to check with authorized distributors or Vishay Intertechnologies directly for the most up-to-date lead time information.

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SI1070X-T1-GE3 Overview

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Part Image SI1070X-T1-E3 Vishay Siliconix

Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET