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SI1499DH-T1-E3 - Vishay

Description: MOSFET 8.0V 1.6A 2.78W 78 mohms @ 4.5V

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SI1499DH-T1-E3 - Vishay PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SI1499DH-T1-E3
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SI1499DH-T1-E3 - Vishay  - 3D model - SOT23 (6-Pin) - SI1499DH-T1-E3
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SI1499DH-T1-E3 Details

  • Manufacturer Part Number:

    SI1499DH-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT, SC-70, 6 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    8 V

  • Drain Current-Max (ID):

    1.6 A

  • Drain-source On Resistance-Max:

    0.078 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.7 W

  • Pulsed Drain Current-Max (IDM):

    6.5 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI1499DH-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI1499DH-T1-E3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for each pin.
  • To ensure proper biasing, connect the input pin (pin 1) to a voltage source through a 1kΩ to 10kΩ resistor. The output pin (pin 5) should be connected to a load resistor (e.g., 1kΩ) to ground. The enable pin (pin 3) can be tied to VCC or a digital signal for enable/disable functionality.
  • The SI1499DH-T1-E3 has an operating temperature range of -40°C to 125°C. However, it's recommended to operate the device within a temperature range of -20°C to 85°C for optimal performance and reliability.
  • Yes, the SI1499DH-T1-E3 is suitable for high-frequency applications up to 1 GHz. However, it's essential to follow proper PCB layout and design guidelines to minimize parasitic inductance and capacitance, ensuring optimal performance at high frequencies.
  • To prevent electrostatic discharge (ESD) damage, handle the SI1499DH-T1-E3 with an ESD wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device's pins or handling the device in environments with high electrostatic potential.

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SI1499DH-T1-E3 Overview

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Part Image SI1499DH-T1-GE3 Vishay Intertechnologies

Power Field-Effect Transistor, 1.6A I(D), 8V, 0.078ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET