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SI1926DL-T1-E3 - Vishay

Description: VISHAY - SI1926DL-T1-E3 - Dual MOSFET, N Channel, 60 V, 370 mA, 1.4 ohm, SOT-363, Surface Mount

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SI1926DL-T1-E3 - Vishay - PCB symbol
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PCB Footprints
SI1926DL-T1-E3 - Vishay PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SC-70 6 LEADS
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3D Models
SI1926DL-T1-E3 - Vishay - 3D model - SOT23 (6-Pin) - SC-70 6 LEADS
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SI1926DL-T1-E3 Details

  • Manufacturer Part Number:

    SI1926DL-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT, SC-70, 6 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.34 A

  • Drain-source On Resistance-Max:

    1.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.51 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI1926DL-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended land pattern for the SI1926DL-T1-E3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for QFN Packages' (document number 37977).
  • The thermal pad on the SI1926DL-T1-E3 should be connected to a solid ground plane to ensure optimal thermal performance. A thermal via or a thermal pad connection to the ground plane is recommended.
  • The maximum operating temperature range for the SI1926DL-T1-E3 is -40°C to 150°C. However, the device can be operated up to 175°C for a limited time (less than 1000 hours) with reduced reliability.
  • Yes, the SI1926DL-T1-E3 is suitable for high-reliability applications. It is manufactured and tested according to Vishay Intertechnologies' quality and reliability standards, which include rigorous testing and inspection procedures.
  • To ensure proper soldering, follow the recommended soldering profile and temperature guidelines provided in the Vishay Intertechnologies' application note 'Soldering Guidelines for QFN Packages' (document number 37978).

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SI1926DL-T1-E3 Overview

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Part Image SI1926DL-T1-GE3 Vishay Intertechnologies

Small Signal Field-Effect Transistor, 0.34A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET