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SI2300DS-T1-GE3 - Vishay

Description: VISHAY - SI2300DS-T1-GE3 - MOSFET, N CHANNEL, 30V, 3.6A, SOT-23-3

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Symbol
SI2300DS-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI2300DS-T1-GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - TO-236
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3D Models
SI2300DS-T1-GE3 - Vishay - 3D model - SOT23 (3-Pin) - TO-236
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SI2300DS-T1-GE3 Details

  • Manufacturer Part Number:

    SI2300DS-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6.95

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    3.6 A

  • Drain-source On Resistance-Max:

    0.068 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    19 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.7 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI2300DS-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2300DS-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5 V and 5.5 V, and the enable pin (EN) to a logic-level signal or a voltage source between 0 V and VIN. Also, ensure the output pin (VOUT) is decoupled with a 1 μF ceramic capacitor.
  • The SI2300DS-T1-GE3 is rated for operation in an ambient temperature range of -40°C to +125°C. However, the device's performance and reliability may degrade at extreme temperatures.
  • Yes, the SI2300DS-T1-GE3 is AEC-Q100 qualified and suitable for high-reliability and automotive applications. However, it's essential to follow the recommended operating conditions and design guidelines to ensure the device meets the required reliability and performance standards.
  • To manage thermal performance, ensure good thermal conduction between the device and the PCB by using a thermal pad or a heat sink. Also, keep the device away from heat sources and ensure good airflow around the device.

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SI2300DS-T1-GE3 Overview

Use the download button to access the SI2300DS-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI230, or try a keyword search, such as Small Signal Field-Effect Transistors

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