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SI2304BDS-T1-GE3 - Vishay

Description: MOSFET 30V 3.2A 1.08W 70mohm @ 10V

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PCB Footprints
SI2304BDS-T1-GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236): 3-LEAD
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3D Models
SI2304BDS-T1-GE3 - Vishay  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236): 3-LEAD
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SI2304BDS-T1-GE3 Details

  • Manufacturer Part Number:

    SI2304BDS-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    2.6 A

  • Drain-source On Resistance-Max:

    0.07 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    28 pF

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    55 ns

  • Turn-on Time-Max (ton):

    32 ns

SI2304BDS-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2304BDS-T1-GE3 is a 4-pad land pattern with a pitch of 0.5 mm and a pad size of 0.8 mm x 0.8 mm. It's essential to follow the recommended footprint to ensure proper thermal and electrical performance.
  • To ensure proper soldering, use a soldering iron with a temperature of 260°C to 280°C. Apply a small amount of solder paste to the PCB pads, and then place the device. Use a reflow oven or a hot air gun to solder the device. Avoid overheating or using excessive force, which can damage the device.
  • The SI2304BDS-T1-GE3 has an operating temperature range of -55°C to 150°C. However, the device's performance and reliability may degrade if operated at extreme temperatures for extended periods. It's essential to ensure the device operates within the recommended temperature range for optimal performance.
  • The SI2304BDS-T1-GE3 is not hermetically sealed, so it's not recommended for use in high-humidity environments. Moisture can penetrate the package and affect the device's performance and reliability. If you must use the device in a humid environment, ensure proper sealing and conformal coating to prevent moisture ingress.
  • Handle the SI2304BDS-T1-GE3 by the body, avoiding touching the leads or electrical contacts. Store the device in its original packaging or an anti-static bag to prevent electrostatic discharge (ESD) damage. Avoid exposing the device to direct sunlight, moisture, or extreme temperatures during storage.

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SI2304BDS-T1-GE3 Overview

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Part Image SI2304BDS-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 2.6A I(D), 30V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

Part Image SI2304BDS-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 2.6A I(D), 30V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236