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SI2304DDS-T1-BE3 - Vishay

Description: N-Channel 30 V 3.3A (Ta), 3.6A (Tc) 1.1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236) ,30 V ,-55°C ~ 150°C (TJ)

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PCB Footprints
SI2304DDS-T1-BE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236): 3-LEAD_2025
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3D Models
SI2304DDS-T1-BE3 - Vishay  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236): 3-LEAD_2025
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SI2304DDS-T1-BE3 Details

  • Manufacturer Part Number:

    SI2304DDS-T1-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.32

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    3.3 A

  • Drain-source On Resistance-Max:

    0.06 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    17 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.7 W

  • Pulsed Drain Current-Max (IDM):

    15 A

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    25 ns

  • Turn-on Time-Max (ton):

    30 ns

SI2304DDS-T1-BE3 Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve thermal performance. A minimum of 2 oz copper thickness is recommended for the thermal pad, and it should be connected to a large copper area to dissipate heat efficiently.
  • The device requires a stable voltage supply and a proper biasing circuit to ensure optimal performance. A decoupling capacitor of at least 10uF is recommended to be placed close to the device to filter out noise and ensure stable operation.
  • The maximum allowable power dissipation for the SI2304DDS-T1-BE3 is 1.5W. Exceeding this limit can cause the device to overheat and reduce its lifespan.
  • The device is sensitive to ESD and requires proper handling and protection. Anti-static wrist straps, mats, and packaging are recommended to prevent ESD damage during handling and storage.
  • The device should be stored in a dry, cool place away from direct sunlight and moisture. The recommended storage temperature range is -40°C to 125°C, and the recommended humidity range is 20% to 80% RH.

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SI2304DDS-T1-BE3 Overview

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For a full list of alternate parts for SI2304DDS-T1-BE3, check out Findchips.com