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SI2306BDS-T1-E3 - Vishay

Description: SI2306BDS-T1-E3, N-channel MOSFET Transistor 3.16 A 30 V, 3-Pin TO-236

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Symbol
SI2306BDS-T1-E3 - Vishay - PCB symbol
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PCB Footprints
SI2306BDS-T1-E3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)
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3D Models
SI2306BDS-T1-E3 - Vishay - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)
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SI2306BDS-T1-E3 Details

  • Manufacturer Part Number:

    SI2306BDS-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Qualification Status:

    Not Qualified

SI2306BDS-T1-E3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the SI2306BDS-T1-E3 is -55°C to 150°C.
  • Yes, the SI2306BDS-T1-E3 is RoHS compliant, meaning it meets the European Union's Restriction of Hazardous Substances directive.
  • The typical turn-on and turn-off time for the SI2306BDS-T1-E3 is around 10-20 ns, but this can vary depending on the specific application and operating conditions.
  • Yes, the SI2306BDS-T1-E3 is designed for high-reliability applications, including aerospace, defense, and industrial control systems.
  • Yes, the SI2306BDS-T1-E3 is compatible with lead-free soldering processes, making it suitable for use in modern electronic assemblies.

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SI2306BDS-T1-E3 Overview

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SI2306BDS-T1-E3 Alternates

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Image Part Number Model
Part Image SI2306BDS-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 3.16A I(D), 30V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA
Part Image SI2306BDS-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 3.16A I(D), 30V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA
Part Image SI2306BDS-T1-GE3 Vishay Intertechnologies

Power Field-Effect Transistor