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SI2307BDS-T1-BE3 - Vishay

Description: MOSFET P-CHANNEL 30-V (D-S) MOSFET

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PCB Footprints
SI2307BDS-T1-BE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - -SOT-23
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SI2307BDS-T1-BE3 - Vishay  - 3D model - SOT23 (3-Pin) - -SOT-23
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SI2307BDS-T1-BE3 Details

  • Manufacturer Part Number:

    SI2307BDS-T1-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    2.5 A

  • Drain-source On Resistance-Max:

    0.078 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    75 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    61 ns

  • Turn-on Time-Max (ton):

    40 ns

SI2307BDS-T1-BE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2307BDS-T1-BE3 is a 6-pin SOT23 package with a 2.9mm x 1.6mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for reliable soldering.
  • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V to 5.5V. The enable pin (EN) should be tied to VIN or a logic signal. The output pin (OUT) should be decoupled with a 1uF ceramic capacitor to ensure stability.
  • The SI2307BDS-T1-BE3 is rated for operation from -40°C to 125°C. However, it's recommended to derate the output current and voltage according to the temperature derating curve provided in the datasheet.
  • Yes, the SI2307BDS-T1-BE3 is AEC-Q100 qualified and suitable for high-reliability and automotive applications. However, it's essential to follow the recommended PCB layout, thermal management, and component selection guidelines to ensure reliable operation.
  • To troubleshoot issues, verify the input voltage, enable pin, and output load conditions. Check for proper PCB layout, decoupling, and thermal management. Use an oscilloscope to monitor the output voltage and current. Consult the datasheet and application notes for guidance on troubleshooting and optimization.

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SI2307BDS-T1-BE3 Overview

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Part Image SI2307BDS-T1-E3 Vishay Intertechnologies

Power Field-Effect Transistor, 2.5A I(D), 30V, 0.078ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image SI2307CDS-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 2.7A I(D), 30V, 0.088ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image SI2307CDS-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 2.7A I(D), 30V, 0.088ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image SI2307CDS-T1-E3 Vishay Intertechnologies

Power Field-Effect Transistor, 2.7A I(D), 30V, 0.088ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image SI2307BDS-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 2.5A I(D), 30V, 0.078ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

For a full list of alternate parts for SI2307BDS-T1-BE3, check out Findchips.com