Part Image

SI2308CDS-T1-GE3 - Vishay

Description: MOSFET 60V Vds 20V Vgs SOT-23

Download SI2308CDS-T1-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SI2308CDS-T1-GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)
click to zoom
3D Models
SI2308CDS-T1-GE3 - Vishay  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)
click to zoom

SI2308CDS-T1-GE3 Details

  • Manufacturer Part Number:

    SI2308CDS-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-23, 3 PIN

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    0.8 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    2.6 A

  • Drain-source On Resistance-Max:

    0.144 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    7 pF

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.6 W

  • Pulsed Drain Current-Max (IDM):

    6 A

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    50 ns

  • Turn-on Time-Max (ton):

    75 ns

SI2308CDS-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2308CDS-T1-GE3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. The recommended land pattern is available in the Vishay Intertechnologies' application note or can be obtained from the manufacturer's website.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet. Additionally, consider using a thermal pad or heat sink to dissipate heat, and ensure proper PCB design and layout to minimize thermal resistance.
  • The maximum allowed voltage on the enable pin (EN) of the SI2308CDS-T1-GE3 is 6V. Exceeding this voltage may damage the device.
  • Yes, the SI2308CDS-T1-GE3 is suitable for high-frequency switching applications up to 100 kHz. However, it is essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's requirements are within the device's specifications.
  • The power sequencing requirements for the SI2308CDS-T1-GE3 are critical to ensure proper device operation. It is recommended to follow the power-up and power-down sequencing guidelines provided in the datasheet to prevent damage or malfunction.

Trust Checks

This model has been verified by system checks.
System Verified
Sponsored

SI2308CDS-T1-GE3 Overview

Use the download button to access the SI2308CDS-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI230, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SI2308CDS-T1-GE3

Showing 0 results