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Si2323DDS-T1-GE3 - Vishay

Description: VISHAY - SI2323DDS-T1-GE3 - Power MOSFET, P Channel, 20 V, 5.3 A, 0.032 ohm, SOT-23, Surface Mount

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PCB Footprints
Si2323DDS-T1-GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - -SOT-23
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Si2323DDS-T1-GE3 - Vishay  - 3D model - SOT23 (3-Pin) - -SOT-23
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Si2323DDS-T1-GE3 Details

  • Manufacturer Part Number:

    SI2323DDS-T1-GE3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    5.3 A

  • Drain-source On Resistance-Max:

    0.039 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    120 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.7 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    98 ns

  • Turn-on Time-Max (ton):

    76 ns

Si2323DDS-T1-GE3 Frequently Asked Questions (FAQs)

  • Vishay provides a recommended PCB layout and land pattern in their application note AN81142, which can be found on their website. Following this layout ensures optimal thermal performance and minimizes parasitic inductance.
  • Follow the recommended soldering profile and temperature guidelines outlined in the datasheet. Ensure the device is properly aligned and secured during the reflow process to prevent thermal shock and damage.
  • Operating the device beyond the recommended temperature range can lead to reduced performance, decreased lifespan, and potential failure. Ensure the device is operated within the specified temperature range to maintain optimal performance and reliability.
  • Follow proper ESD handling and assembly procedures, such as using ESD-safe materials, grounding straps, and wrist straps. Ensure the device is properly packaged and stored in ESD-safe containers to prevent damage.
  • Ensure proper thermal management by providing adequate heat sinking, airflow, and thermal interface materials. Follow Vishay's thermal management guidelines and application notes for high-power applications.

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Si2323DDS-T1-GE3 Overview

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