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SI2333CDS-T1-E3 - Vishay

Description: MOSFET 12V 5.1A 2.5W 35mohm @ 4.5V

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PCB Footprints
SI2333CDS-T1-E3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)
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3D Models
SI2333CDS-T1-E3 - Vishay  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)
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SI2333CDS-T1-E3 Details

  • Manufacturer Part Number:

    SI2333CDS-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    12 V

  • Drain Current-Max (ID):

    7.1 A

  • Drain-source On Resistance-Max:

    0.035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    260 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    90 ns

  • Turn-on Time-Max (ton):

    80 ns

SI2333CDS-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2333CDS-T1-E3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. The datasheet provides a recommended land pattern and soldering guidelines.
  • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source, and the enable pin (EN) to a logic-level signal. The datasheet provides a recommended operating condition and application circuit.
  • The SI2333CDS-T1-E3 has an operating temperature range of -40°C to 125°C. However, it's essential to consider the derating curves and thermal management guidelines provided in the datasheet to ensure reliable operation.
  • Yes, the SI2333CDS-T1-E3 is qualified for automotive and high-reliability applications. It meets the AEC-Q100 standard and is manufactured with automotive-grade processes. However, it's essential to consult with Vishay's application engineers to ensure the device meets the specific requirements of your application.
  • To prevent ESD damage, handle the SI2333CDS-T1-E3 with ESD-protective equipment, such as wrist straps, mats, and bags. Follow standard ESD handling procedures, and ensure the device is stored in its original packaging or an ESD-protective container when not in use.

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SI2333CDS-T1-E3 Overview

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Part Image SI2333CDS-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 7.1A I(D), 12V, 0.035ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB