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SI2333DDS-T1-GE3 - Vishay

Description: MOSFET P-Ch 12V 5A TrenchFET SOT23 Vishay SI2333DDS-T1-GE3 P-channel MOSFET Transistor, 6 A, 12 V, 3-Pin SOT-23

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Symbol
SI2333DDS-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI2333DDS-T1-GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)
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3D Models
SI2333DDS-T1-GE3 - Vishay - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)
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SI2333DDS-T1-GE3 Details

  • Manufacturer Part Number:

    SI2333DDS-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    12 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.028 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    236 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.7 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI2333DDS-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2333DDS-T1-GE3 is a 3x3mm QFN package with a 0.5mm pitch. A minimum of 2mm clearance around the device is recommended for thermal and electrical considerations.
  • To ensure the device operates within the specified junction temperature range, provide adequate heat sinking, use a thermal interface material, and follow the recommended PCB layout guidelines. Additionally, consider using a thermal pad or heat sink to dissipate heat.
  • The maximum allowed voltage on the enable pin (EN) is 3.6V. Exceeding this voltage may cause damage to the device.
  • Yes, the SI2333DDS-T1-GE3 is qualified for automotive and high-reliability applications. However, it's essential to review the device's AEC-Q100 qualification and follow the recommended design and testing guidelines for these applications.
  • The SI2333DDS-T1-GE3 has built-in ESD protection. However, it's still essential to follow proper ESD handling and storage procedures to prevent damage. Use an ESD wrist strap or mat, and store the devices in anti-static packaging.

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SI2333DDS-T1-GE3 Overview

Use the download button to access the SI2333DDS-T1-GE3 schematic symbol, PCB footprint, and 3D model.
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