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SI2343CDS-T1-BE3 - Vishay

Description: P-Channel 30 V 4.2A (Ta), 5.9A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

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PCB Footprints
SI2343CDS-T1-BE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)
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3D Models
SI2343CDS-T1-BE3 - Vishay  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)
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SI2343CDS-T1-BE3 Details

  • Manufacturer Part Number:

    SI2343CDS-T1-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    5.9 A

  • Drain-source On Resistance-Max:

    0.045 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    93 pF

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    25 A

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    40 ns

  • Turn-on Time-Max (ton):

    83 ns

SI2343CDS-T1-BE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint is a 3x3mm QFN package with a 0.5mm pitch. A thermal pad is recommended for optimal thermal performance.
  • Ensure good thermal conductivity by using a thermal pad, and consider using a heat sink or thermal interface material. Keep the MOSFET away from heat sources and ensure good airflow.
  • The maximum allowed power dissipation is dependent on the ambient temperature and the thermal resistance of the system. Refer to the datasheet's thermal characteristics and power dissipation curves to determine the maximum allowed power dissipation for your specific application.
  • Yes, the SI2343CDS-T1-BE3 is suitable for high-frequency switching applications due to its low gate charge and low RDS(on). However, ensure that the PCB layout and component selection are optimized for high-frequency operation.
  • Handle the device by the body, not the leads. Use an ESD wrist strap or mat, and ensure that the workspace and tools are ESD-safe. Avoid touching the device's pins or leads.

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SI2343CDS-T1-BE3 Overview

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