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SI2343CDS-T1-GE3 - Vishay

Description: Trans MOSFET P-CH 30V 4.2A 3-Pin Vishay SI2343CDS-T1-GE3 P-channel MOSFET Transistor, 4.7 A, -30 V, 3-Pin TO-236

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PCB Footprints
SI2343CDS-T1-GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)
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3D Models
SI2343CDS-T1-GE3 - Vishay  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)
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SI2343CDS-T1-GE3 Details

  • Manufacturer Part Number:

    SI2343CDS-T1-GE3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    SOT-23

  • Pin Count:

    3

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    5.9 A

  • Drain-source On Resistance-Max:

    0.045 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    93 pF

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    25 A

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    40 ns

  • Turn-on Time-Max (ton):

    83 ns

SI2343CDS-T1-GE3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the SI2343CDS-T1-GE3 is -55°C to 150°C.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 4.5V for the SI2343CDS-T1-GE3.
  • The recommended gate resistor value for the SI2343CDS-T1-GE3 is typically in the range of 10Ω to 100Ω, depending on the specific application and switching frequency.
  • Yes, the SI2343CDS-T1-GE3 is suitable for high-frequency switching applications up to 1MHz, but ensure proper PCB layout and decoupling to minimize ringing and EMI.
  • Use a TVS diode or a zener diode to protect the MOSFET from overvoltage, and follow proper ESD handling and storage procedures to prevent damage.

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SI2343CDS-T1-GE3 Overview

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