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SI2343DS-T1-BE3 - Vishay

Description: MOSFET P-CHANNEL 30-V (D-S)

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PCB Footprints
SI2343DS-T1-BE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)
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3D Models
SI2343DS-T1-BE3 - Vishay  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)
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SI2343DS-T1-BE3 Details

  • Manufacturer Part Number:

    SI2343DS-T1-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    3.1 A

  • Drain-source On Resistance-Max:

    0.053 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    105 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    15 A

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    80 ns

  • Turn-on Time-Max (ton):

    40 ns

SI2343DS-T1-BE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint is a standard SO-8 package with a minimum pad size of 1.5 mm x 2.5 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure optimal thermal performance, use a thermal pad on the PCB, apply a thermal interface material (TIM) between the MOSFET and the heat sink, and ensure good airflow around the device.
  • The maximum allowed power dissipation is dependent on the ambient temperature and the thermal resistance of the system. As a general guideline, the maximum power dissipation is approximately 2.5 W at 25°C ambient temperature.
  • Handle the device by the body or use an ESD wrist strap or mat to prevent ESD damage. Ensure that the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays.
  • The recommended gate drive voltage is between 4.5 V and 10 V, with a maximum gate-source voltage of ±20 V.

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SI2343DS-T1-BE3 Overview

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Part Image SI2343DS-E3 Vishay Intertechnologies

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For a full list of alternate parts for SI2343DS-T1-BE3, check out Findchips.com