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SI2347DS-T1-BE3 - Vishay

Description: MOSFET P-CHANNEL 30-V (D-S)

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SI2347DS-T1-BE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - sot-23-ren5
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SI2347DS-T1-BE3 - Vishay  - 3D model - SOT23 (3-Pin) - sot-23-ren5
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SI2347DS-T1-BE3 Details

  • Manufacturer Part Number:

    SI2347DS-T1-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    0.042 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    73 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.7 W

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI2347DS-T1-BE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint is a standard SOT23-3L package with a 1.3mm x 1.3mm body size and 0.5mm lead pitch. A sample footprint can be found in the Vishay Intertechnologies' application note AN81142.
  • To ensure optimal thermal performance, ensure a good thermal connection between the MOSFET's drain tab and a heat sink or a thermal pad on the PCB. Use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K. Keep the MOSFET away from heat sources and ensure good airflow around the device.
  • The maximum allowed power dissipation (PD) is dependent on the ambient temperature (TA) and the thermal resistance (RθJA). For the SI2347DS-T1-BE3, the maximum PD is approximately 1.4W at TA = 25°C and RθJA = 125°C/W. Use the datasheet's thermal derating curve to determine the maximum PD for your specific application.
  • Yes, the SI2347DS-T1-BE3 is suitable for high-frequency switching applications up to 1 MHz. However, ensure that the gate drive circuitry is properly designed to minimize ringing and overshoot, and that the MOSFET's switching losses are considered in your thermal design.
  • Handle the MOSFET by the body, not the leads, to prevent ESD damage. Use an ESD wrist strap or mat, and ensure that the workspace and tools are ESD-protected. Store the devices in their original packaging or in an ESD-protected container.

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SI2347DS-T1-BE3 Overview

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