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SI2369BDS-T1-GE3 - Vishay

Description: MOSFET 30-V (D-S) MOSFET P-CHANNEL

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SI2369BDS-T1-GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SI2369BDS-T1-GE3
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SI2369BDS-T1-GE3 - Vishay  - 3D model - SOT23 (3-Pin) - SI2369BDS-T1-GE3
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SI2369BDS-T1-GE3 Details

  • Manufacturer Part Number:

    SI2369BDS-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2019-05-16

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    7.5 A

  • Drain-source On Resistance-Max:

    0.027 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    40 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    130 ns

  • Turn-on Time-Max (ton):

    160 ns

SI2369BDS-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI2369BDS-T1-GE3 is a 4-pin QFN package with a 2x2 mm body size and 0.5 mm pitch. A recommended land pattern is available in the Vishay Intertechnologies application note AN10343.
  • To ensure reliability in high-temperature applications, follow the recommended operating conditions and derating guidelines in the datasheet. Additionally, consider using a thermal interface material (TIM) to improve heat transfer between the device and the PCB, and ensure good airflow around the device.
  • The maximum allowed voltage on the enable pin (EN) of the SI2369BDS-T1-GE3 is 6 V. Exceeding this voltage may damage the device.
  • The SI2369BDS-T1-GE3 is rated for a maximum continuous current of 3.5 A. For high-current applications, consider using multiple devices in parallel or selecting a different device with a higher current rating.
  • To troubleshoot issues with the SI2369BDS-T1-GE3, start by verifying the device is properly soldered and the PCB layout meets the recommended guidelines. Check the input voltage, current, and temperature to ensure they are within the recommended operating conditions. Use a thermal camera or thermometer to monitor the device temperature, and consider using a debug header to monitor the device's internal signals.

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SI2369BDS-T1-GE3 Overview

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