- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for SI2387DS-T1-GE3
- Part Number SI2387DS-T1-GE3
- Manufacturer Vishay
- Pin Count 3
- Part Category MOSFET (P-Channel)
- Package Category SOT23 (3-Pin)
- Footprint Name SOT23 (3-Pin) - sot-23-ren5
- Released Date Nov 24, 2021
- Last Modified Date Mar 7, 2023 4:10 PM UTC
- Pinout / Pin List Click Here (Member Only)
SI2387DS-T1-GE3 Details
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Manufacturer Part Number:
SI2387DS-T1-GE3
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Rohs Code:
Yes
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Part Life Cycle Code:
Active
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Package Description:
TO-236, SOT-23, 3 PIN
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Country Of Origin:
Germany
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ECCN Code:
EAR99
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Factory Lead Time:
29 Weeks
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Manufacturer:
Vishay Intertechnologies
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YTEOL:
6
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
80 V
SI2387DS-T1-GE3 Frequently Asked Questions (FAQs)
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The recommended PCB footprint for the SI2387DS-T1-GE3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
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To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V and 5.5V. The enable pin (EN) should be tied to VIN or a logic signal. The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor to ensure stability.
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The SI2387DS-T1-GE3 can deliver up to 1A of output current. However, it's recommended to limit the output current to 500mA for optimal performance and to prevent overheating.
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To protect the SI2387DS-T1-GE3 from overvoltage and undervoltage conditions, add a voltage supervisor or a reset IC to monitor the input voltage. You can also add a TVS diode or a zener diode to clamp the input voltage to a safe level.
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The thermal derating curve for the SI2387DS-T1-GE3 is not explicitly stated in the datasheet. However, as a general guideline, the device's power dissipation should be derated by 1.5mW/°C above 25°C to ensure reliable operation.
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SI2387DS-T1-GE3 Overview
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