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SI3430DV-T1-E3 - Vishay

Description: SI3430DV-T1-E3, N-channel MOSFET Transistor 1.8 A 100 V, 6-Pin TSOP

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SI3430DV-T1-E3 - Vishay - PCB symbol
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PCB Footprints
SI3430DV-T1-E3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - TSOP 6 LEAD
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3D Models
SI3430DV-T1-E3 - Vishay - 3D model - Small Outline Packages - TSOP 6 LEAD
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SI3430DV-T1-E3 Details

  • Manufacturer Part Number:

    SI3430DV-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    MO-193C, TSOP-6

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    1.8 A

  • Drain-source On Resistance-Max:

    0.17 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-193AA

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.14 W

  • Pulsed Drain Current-Max (IDM):

    8 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    50 ns

  • Turn-on Time-Max (ton):

    40 ns

SI3430DV-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI3430DV-T1-E3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for each pin.
  • To ensure proper biasing, connect the VCC pin to a stable 3.3V or 5V power supply, and the GND pin to a solid ground plane. The EN pin should be tied to VCC or a digital signal for enable/disable functionality.
  • The SI3430DV-T1-E3 is rated for operation from -40°C to 125°C (junction temperature). However, it's recommended to operate within -20°C to 85°C for optimal performance and reliability.
  • Yes, the SI3430DV-T1-E3 is AEC-Q100 qualified and suitable for high-reliability and automotive applications. However, it's essential to follow proper design and testing guidelines to ensure the device meets the specific application requirements.
  • To prevent ESD damage, handle the SI3430DV-T1-E3 with an anti-static wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device's pins or handling it in environments with high electrostatic potential.

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SI3430DV-T1-E3 Overview

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Part Image SI3430DV-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 1.8A I(D), 100V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA