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SI3437DV-T1-E3 - Vishay

Description: SI3437DV-T1-E3, P-channel MOSFET Transistor 1.1 A 150 V, 6-Pin TSOP

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Symbol
SI3437DV-T1-E3 - Vishay - PCB symbol
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PCB Footprints
SI3437DV-T1-E3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - TSOP 6 LEAD
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3D Models
SI3437DV-T1-E3 - Vishay - 3D model - Small Outline Packages - TSOP 6 LEAD
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SI3437DV-T1-E3 Details

  • Manufacturer Part Number:

    SI3437DV-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    MO-193C, TSOP-6

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    1.25 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    1.4 A

  • Drain-source On Resistance-Max:

    0.75 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    21 pF

  • JEDEC-95 Code:

    MO-193AA

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    3.2 W

  • Pulsed Drain Current-Max (IDM):

    5 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    56 ns

  • Turn-on Time-Max (ton):

    65 ns

SI3437DV-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI3437DV-T1-E3 is a 3x3mm QFN package with a 0.5mm pitch. A minimum of 2mm clearance around the device is recommended for thermal and electrical considerations.
  • To ensure reliable operation in high-temperature environments, ensure the device is operated within its specified temperature range (-40°C to 150°C). Implement proper thermal management, such as heat sinks or thermal pads, to maintain a safe junction temperature (Tj).
  • The SI3437DV-T1-E3 has built-in ESD protection, but it's still important to follow proper ESD handling procedures during assembly and testing. Use ESD-safe materials, grounding straps, and ionizers to minimize the risk of ESD damage.
  • The SI3437DV-T1-E3 is rated for a maximum voltage of 40V. Exceeding this voltage may cause permanent damage to the device. Ensure the device is operated within its specified voltage range to maintain reliability and prevent damage.
  • To troubleshoot issues with the SI3437DV-T1-E3, start by verifying the device is properly powered and configured. Check for proper voltage supply, clock signal integrity, and signal routing. Use oscilloscopes or logic analyzers to debug signal issues. Consult the datasheet and application notes for guidance on troubleshooting specific issues.

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SI3437DV-T1-E3 Overview

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