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SI3440ADV-T1-BE3 - Vishay

Description: N-Channel 150 V 1.6A (Ta), 2.2A (Tc) 2W (Ta), 3.6W (Tc) Surface Mount 6-TSOP

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SI3440ADV-T1-BE3 - Vishay PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOP: 5/6−LEAD
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SI3440ADV-T1-BE3 - Vishay  - 3D model - SOT23 (6-Pin) - TSOP: 5/6−LEAD
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SI3440ADV-T1-BE3 Details

  • Manufacturer Part Number:

    SI3440ADV-T1-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    MO-193C, TSOP-6

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    29 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    2.2 A

  • Drain-source On Resistance-Max:

    0.38 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3 pF

  • JEDEC-95 Code:

    MO-193AA

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.6 W

  • Pulsed Drain Current-Max (IDM):

    4 A

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI3440ADV-T1-BE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI3440ADV-T1-BE3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5 V and 5.5 V, and the enable pin (EN) to a logic-level signal or a voltage source between 0 V and VIN. Additionally, decouple the input pin with a 1 μF capacitor to reduce noise and ensure stability.
  • The SI3440ADV-T1-BE3 has an operating temperature range of -40°C to 125°C, making it suitable for a wide range of industrial and automotive applications.
  • To protect the SI3440ADV-T1-BE3 from overvoltage and overcurrent conditions, consider adding external protection components such as a voltage regulator, TVS diodes, and current-limiting resistors to prevent damage from voltage spikes, surges, and excessive current.
  • The typical quiescent current consumption of the SI3440ADV-T1-BE3 is around 10 μA, making it suitable for low-power applications.

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SI3440ADV-T1-BE3 Overview

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Part Image SI3440DV-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 1.2A I(D), 150V, 0.375ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193C

Part Image SI3440DV-T1-E3 Vishay Intertechnologies

Power Field-Effect Transistor, 1.2A I(D), 150V, 0.375ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193C