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SI3440ADV-T1-GE3 - Vishay

Description: MOSFET 150V Vds 20V Vgs TSOP-6

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Symbol
SI3440ADV-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SI3440ADV-T1-GE3 - Vishay PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOP 6
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3D Models
SI3440ADV-T1-GE3 - Vishay - 3D model - SOT23 (6-Pin) - TSOP 6
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SI3440ADV-T1-GE3 Details

  • Manufacturer Part Number:

    SI3440ADV-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    MO-193C, TSOP-6

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    29 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    2.2 A

  • Drain-source On Resistance-Max:

    0.38 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3 pF

  • JEDEC-95 Code:

    MO-193AA

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.6 W

  • Pulsed Drain Current-Max (IDM):

    4 A

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI3440ADV-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI3440ADV-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 1.3 mm x 1.3 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure the SI3440ADV-T1-GE3 operates within its SOA, ensure the maximum voltage and current ratings are not exceeded, and the device is operated within the recommended temperature range of -40°C to 150°C.
  • A recommended thermal management strategy for the SI3440ADV-T1-GE3 is to use a thermal pad on the PCB, ensure good airflow, and consider using a heat sink or thermal interface material if high power dissipation is expected.
  • To handle ESD protection when handling the SI3440ADV-T1-GE3, use an ESD wrist strap or mat, handle the device by the body or pins, and avoid touching the pins or die.
  • The recommended storage and handling procedure for the SI3440ADV-T1-GE3 is to store the device in its original packaging, avoid exposure to moisture and extreme temperatures, and handle the device in a clean and dry environment.

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SI3440ADV-T1-GE3 Overview

Use the download button to access the SI3440ADV-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI344, or try a keyword search, such as Power Field-Effect Transistors

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SI3440ADV-T1-GE3 Alternates

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Part Image SI3440DV-T1-GE3 Vishay Intertechnologies

Power Field-Effect Transistor, 1.2A I(D), 150V, 0.375ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193C
Part Image SI3440DV-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 1.2A I(D), 150V, 0.375ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193C
Part Image SI3440DV-T1-E3 Vishay Intertechnologies

Power Field-Effect Transistor, 1.2A I(D), 150V, 0.375ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193C