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SI3440DV-T1-E3 - Vishay

Description: VISHAY - SI3440DV-T1-E3 - MOSFET Transistor, N Channel, 1.2 A, 150 V, 0.31 ohm, 10 V, 4 V

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SI3440DV-T1-E3 - Vishay - PCB symbol
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PCB Footprints
SI3440DV-T1-E3 - Vishay PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOP 6
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3D Models
SI3440DV-T1-E3 - Vishay - 3D model - SOT23 (6-Pin) - TSOP 6
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SI3440DV-T1-E3 Details

  • Manufacturer Part Number:

    SI3440DV-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT, TSOP-6

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    1.2 A

  • Drain-source On Resistance-Max:

    0.375 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-193C

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.14 W

  • Pulsed Drain Current-Max (IDM):

    6 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI3440DV-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI3440DV-T1-E3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5 V and 5.5 V, and the enable pin (EN) to a logic-level signal or a voltage source between 0 V and VIN. The output pin (VOUT) should be decoupled with a 1 μF ceramic capacitor.
  • The SI3440DV-T1-E3 can deliver up to 1 A of output current, but it's recommended to limit the output current to 500 mA for optimal performance and thermal management.
  • To ensure proper thermal management, provide a thermal pad on the PCB, use a heat sink if necessary, and maintain a maximum junction temperature (TJ) of 125°C. Also, ensure good airflow and avoid blocking the airflow around the device.
  • Yes, the SI3440DV-T1-E3 is AEC-Q100 qualified, making it suitable for automotive applications. However, it's essential to follow the recommended operating conditions and ensure the device is used within its specified ratings.

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SI3440DV-T1-E3 Overview

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SI3440DV-T1-E3 Alternates

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Part Image SI3440ADV-T1-GE3 Vishay Intertechnologies

Power Field-Effect Transistor, 2.2A I(D), 150V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
Part Image SI3440DV-T1-GE3 Vishay Intertechnologies

Power Field-Effect Transistor, 1.2A I(D), 150V, 0.375ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193C
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Power Field-Effect Transistor, 1.2A I(D), 150V, 0.375ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193C