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SI3454ADV-T1-E3 - Vishay

Description: SI3454ADV-T1-E3, N-channel MOSFET Transistor 3.4 A 30 V, 6-Pin TSOP

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SI3454ADV-T1-E3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - TSOP 6 LEAD
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SI3454ADV-T1-E3 - Vishay  - 3D model - Small Outline Packages - TSOP 6 LEAD
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SI3454ADV-T1-E3 Details

  • Manufacturer Part Number:

    SI3454ADV-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TSOP-6

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    3.4 A

  • Drain-source On Resistance-Max:

    0.06 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

SI3454ADV-T1-E3 Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a 2-layer or 4-layer board with a solid ground plane on the bottom layer, and to place thermal vias under the device to dissipate heat efficiently.
  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal design and layout guidelines, and to consider derating the device's power handling capabilities according to the ambient temperature.
  • The recommended soldering conditions for the SI3454ADV-T1-E3 are a peak temperature of 260°C (500°F) for a maximum of 10 seconds, with a soldering iron temperature of 350°C (662°F) and a soldering time of 3 seconds maximum.
  • While the SI3454ADV-T1-E3 is a high-performance device, it's essential to consult with Vishay Intertechnologies or a qualified reliability engineer to determine its suitability for high-reliability or aerospace applications, as additional testing and qualification may be required.
  • To prevent electrostatic discharge (ESD) damage, it's recommended to handle the SI3454ADV-T1-E3 in an ESD-protected environment, use ESD-protective packaging, and follow proper handling and storage procedures.

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SI3454ADV-T1-E3 Overview

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Part Image SI3454ADV-T1 Vishay Siliconix

Power Field-Effect Transistor, 3.4A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SI3454ADV-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 3.4A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET