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SI3455ADV-T1-E3 - Vishay

Description: SI3455ADV-T1-E3, P-channel MOSFET Transistor 2.7 A 30 V, 6-Pin TSOP

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SI3455ADV-T1-E3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - TSOP 6 LEAD
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SI3455ADV-T1-E3 - Vishay  - 3D model - Small Outline Packages - TSOP 6 LEAD
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SI3455ADV-T1-E3 Details

  • Manufacturer Part Number:

    SI3455ADV-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    MO-193C, TSOP-6

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    2.7 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    TRENCH MOSFET

  • JEDEC-95 Code:

    MO-193AA

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.14 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    55 ns

  • Turn-on Time-Max (ton):

    35 ns

SI3455ADV-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI3455ADV-T1-E3 is a 5-pin SOT23 package with a minimum pad size of 1.3 mm x 1.3 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure the SI3455ADV-T1-E3 operates within its recommended operating conditions, maintain a junction temperature (TJ) between -40°C to 150°C, and an ambient temperature (TA) between -40°C to 85°C. Also, ensure the input voltage (VIN) is within the recommended range of 2.5V to 5.5V.
  • The maximum allowed power dissipation for the SI3455ADV-T1-E3 is 1.4W at an ambient temperature of 70°C, and 0.8W at an ambient temperature of 85°C.
  • To prevent electrostatic discharge (ESD) damage, handle the SI3455ADV-T1-E3 with an ESD wrist strap or mat, and ensure the workspace is ESD-protected. Also, avoid touching the device's pins or handling it in environments with high electrostatic charges.
  • Store the SI3455ADV-T1-E3 in a dry, cool place with a relative humidity below 60% and an ambient temperature between -40°C to 30°C. Avoid exposing the device to direct sunlight, moisture, or extreme temperatures.

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