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SI3460BDV-T1-E3 - Vishay

Description: SI3460BDV-T1-E3, N-channel MOSFET Transistor 6.7 A 20 V, 6-Pin TSOP

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SI3460BDV-T1-E3 - Vishay - PCB symbol
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SI3460BDV-T1-E3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - 6-LEAD TSOP
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SI3460BDV-T1-E3 - Vishay - 3D model - Small Outline Packages - 6-LEAD TSOP
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SI3460BDV-T1-E3 Details

  • Manufacturer Part Number:

    SI3460BDV-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT, TSOP-6

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.027 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.5 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI3460BDV-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI3460BDV-T1-E3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5 V and 5.5 V, and the enable pin (EN) to a logic-level signal or a voltage source between 0 V and VIN. Also, ensure the output pin (VOUT) is decoupled with a 1 μF ceramic capacitor.
  • The SI3460BDV-T1-E3 can deliver up to 1 A of output current, but it's recommended to limit the output current to 500 mA for optimal performance and thermal management.
  • To manage thermal performance, ensure good airflow around the device, use a thermal pad or heat sink, and avoid operating the device at maximum power dissipation for extended periods. The maximum junction temperature (TJ) is 150°C.
  • Yes, the SI3460BDV-T1-E3 is AEC-Q100 qualified, making it suitable for automotive applications. However, it's essential to review the device's specifications and ensure it meets the specific requirements of your automotive application.

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SI3460BDV-T1-E3 Overview

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