SI3460DV-T1-E3 - Vishay

SI3460DV-T1-E3 Details

• Manufacturer Part Number:

  SI3460DV-T1-E3

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Obsolete

• Package Description:

  MO-193C, TSOP-6

• ECCN Code:

  EAR99

• Manufacturer:

  Vishay Intertechnologies

• YTEOL:

  0

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  20 V

• Drain Current-Max (ID):

  5.1 A

• Drain-source On Resistance-Max:

  0.027 Ω

• FET Technology:

  TRENCH MOSFET

• JEDEC-95 Code:

  MO-193AA

• JESD-30 Code:

  R-PDSO-G6

• JESD-609 Code:

  e3

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  6

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  260

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  1.1 W

• Pulsed Drain Current-Max (IDM):

  20 A

• Qualification Status:

  Not Qualified

• Reference Standard:

  IEC-61249-2-21

• Surface Mount:

  YES

• Terminal Finish:

  Matte Tin (Sn)

• Terminal Form:

  GULL WING

• Terminal Position:

  DUAL

• Time@Peak Reflow Temperature-Max (s):

  40

• Transistor Element Material:

  SILICON

• Turn-off Time-Max (toff):

  200 ns

• Turn-on Time-Max (ton):

  90 ns