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SI3464DV-T1-BE3 - Vishay

Description: MOSFET N-CHANNEL 20-V (D-S)

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PCB Footprints
SI3464DV-T1-BE3 - Vishay PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SI3464DV-T1-BE3-AP
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SI3464DV-T1-BE3 - Vishay  - 3D model - SOT23 (6-Pin) - SI3464DV-T1-BE3-AP
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SI3464DV-T1-BE3 Details

  • Manufacturer Part Number:

    SI3464DV-T1-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    MO-193C, TSOP-6

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7.07

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    70 pF

  • JEDEC-95 Code:

    MO-193AA

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.6 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI3464DV-T1-BE3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the SI3464DV-T1-BE3 should include a solid ground plane, short and wide traces for power and ground, and a decoupling capacitor (e.g., 100nF) close to the device. Additionally, keep sensitive analog signals away from the switching node and ensure good thermal dissipation.
  • To ensure the SI3464DV-T1-BE3 operates within its SOA, monitor the device's junction temperature (TJ), drain-source voltage (VDS), and drain current (ID). Use thermal management techniques, such as heat sinks or thermal pads, to keep TJ below 150°C. Also, ensure VDS and ID are within the recommended limits specified in the datasheet.
  • The recommended input capacitor value for the SI3464DV-T1-BE3 is typically in the range of 10uF to 22uF, with a voltage rating of at least 25V. A low-ESR capacitor (e.g., X5R or X7R dielectric) is recommended to minimize voltage ripple and ensure stable operation.
  • Yes, the SI3464DV-T1-BE3 is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is manufactured using Vishay's automotive-grade process. However, it's essential to follow the recommended operating conditions, PCB layout, and thermal management guidelines to ensure reliable operation in these applications.
  • To troubleshoot issues with the SI3464DV-T1-BE3, start by verifying the PCB layout, component selection, and soldering quality. Check for signs of overheating, such as excessive temperature or thermal shutdown. Use oscilloscopes or logic analyzers to monitor the device's input and output signals. Consult the datasheet and application notes for guidance on troubleshooting and fault diagnosis.

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SI3464DV-T1-BE3 Overview

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