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SI3476DV-T1-BE3 - Vishay

Description: MOSFETs TSOP6, N-CH 80V 3.5A

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SI3476DV-T1-BE3 - Vishay - PCB symbol
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PCB Footprints
SI3476DV-T1-BE3 - Vishay PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOP-6
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3D Models
SI3476DV-T1-BE3 - Vishay - 3D model - SOT23 (6-Pin) - TSOP-6
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SI3476DV-T1-BE3 Details

  • Manufacturer Part Number:

    SI3476DV-T1-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    MO-193C, TSOP-6

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    29 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    4.6 A

  • Drain-source On Resistance-Max:

    0.093 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    16 pF

  • JEDEC-95 Code:

    MO-193AA

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.6 W

  • Pulsed Drain Current-Max (IDM):

    18 A

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    43 ns

  • Turn-on Time-Max (ton):

    115 ns

SI3476DV-T1-BE3 Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a 2-layer or 4-layer board with a solid ground plane on the bottom layer, and to place thermal vias under the device to dissipate heat efficiently.
  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal design and layout guidelines, and to consider derating the device's power handling capabilities according to the ambient temperature.
  • The recommended soldering conditions for the SI3476DV-T1-BE3 are a peak temperature of 260°C (500°F) for a maximum of 10 seconds, with a soldering iron temperature of 350°C (662°F) and a soldering time of 3 seconds maximum.
  • While the SI3476DV-T1-BE3 is a high-quality device, it's essential to consult with Vishay Intertechnologies or a qualified reliability engineer to determine its suitability for high-reliability or aerospace applications, as additional testing and qualification may be required.
  • To troubleshoot common issues with the SI3476DV-T1-BE3, start by checking the device's thermal design and layout, ensuring proper heat dissipation and cooling. Next, verify the device's operating conditions, including voltage, current, and power handling. Finally, consult the datasheet and application notes for guidance on troubleshooting specific issues.

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SI3476DV-T1-BE3 Overview

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SI3476DV-T1-BE3 Alternates

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Part Image SI3476DV-T1-GE3 Vishay Intertechnologies

Power Field-Effect Transistor, 4.6A I(D), 80V, 0.093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA