- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for SI3476DV-T1-GE3
- Part Number SI3476DV-T1-GE3
- Manufacturer Vishay
- Pin Count 6
- Part Category MOSFET (N-Channel)
- Package Category SOT23 (6-Pin)
- Footprint Name SOT23 (6-Pin) - TSOP-6
- Released Date Apr 18, 2021
- Last Modified Date Mar 7, 2023 4:10 PM UTC
- Pinout / Pin List Click Here (Member Only)
SI3476DV-T1-GE3 Details
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Manufacturer Part Number:
SI3476DV-T1-GE3
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Rohs Code:
Yes
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Part Life Cycle Code:
Active
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Package Description:
HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6
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Country Of Origin:
Germany
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ECCN Code:
EAR99
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Factory Lead Time:
29 Weeks
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Manufacturer:
Vishay Intertechnologies
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YTEOL:
6
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
80 V
SI3476DV-T1-GE3 Frequently Asked Questions (FAQs)
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The recommended PCB footprint for the SI3476DV-T1-GE3 is a standard QFN16 package with a 3x3mm body size and 0.5mm pitch. A recommended land pattern is available in the Vishay Intertechnologies' application note or can be obtained from the manufacturer's website.
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To ensure proper soldering, follow the recommended soldering profile and temperature guidelines provided in the datasheet. Additionally, use a solder paste with a melting point between 217°C to 220°C, and ensure the PCB is cleaned and free of contaminants before soldering.
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The SI3476DV-T1-GE3 has an operating temperature range of -40°C to 125°C. However, it's essential to note that the device's performance and reliability may degrade if operated at the extreme ends of this range for extended periods.
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The SI3476DV-T1-GE3 is designed to withstand moderate vibration levels. However, if your application involves extreme vibration, it's recommended to consult with Vishay Intertechnologies' application engineers to discuss specific requirements and potential custom solutions.
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To prevent electrostatic discharge (ESD) damage, handle the SI3476DV-T1-GE3 with ESD-protective equipment, such as wrist straps, mats, and bags. Ensure the workspace is ESD-safe, and follow proper handling and storage procedures.
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SI3476DV-T1-GE3 Overview
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