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SI3493DDV-T1-GE3 - Vishay

Description: MOSFET -20V Vds 8V Vgs TSOP-6

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PCB Footprints
SI3493DDV-T1-GE3 - Vishay PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - MO-193C
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3D Models
SI3493DDV-T1-GE3 - Vishay  - 3D model - SOT23 (6-Pin) - MO-193C
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SI3493DDV-T1-GE3 Details

  • Manufacturer Part Number:

    SI3493DDV-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2017-03-22

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    5 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    200 pF

  • JESD-30 Code:

    R-PDSO-G6

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    3.6 W

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    205 ns

  • Turn-on Time-Max (ton):

    83 ns

SI3493DDV-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI3493DDV-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure the SI3493DDV-T1-GE3 operates within its SOA, ensure the maximum voltage rating is not exceeded, and the device is not exposed to excessive temperatures, currents, or power dissipation. Refer to the datasheet for specific SOA guidelines.
  • A combination of thermal vias, thermal pads, and a heat sink can be used to effectively manage the thermal performance of the SI3493DDV-T1-GE3. Ensure the thermal interface material (TIM) has a thermal conductivity of at least 1 W/m-K.
  • Yes, the SI3493DDV-T1-GE3 is suitable for high-reliability applications due to its robust design, high-temperature rating, and compliance with industry standards such as AEC-Q100 and IATF 16949.
  • To troubleshoot issues with the SI3493DDV-T1-GE3, start by verifying the device is properly soldered and the PCB layout is correct. Check for signs of overheating, electrical overstress, or physical damage. Consult the datasheet and application notes for guidance on troubleshooting and fault diagnosis.

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SI3493DDV-T1-GE3 Overview

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