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SI4116DY-T1-GE3 - Vishay

Description: SI4116DY-T1-GE3, N-channel MOSFET Transistor 12.7 A 25 V, 8-Pin SOIC

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SI4116DY-T1-GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - 8-Pin Narrow SOIC
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SI4116DY-T1-GE3 - Vishay  - 3D model - Small Outline Packages - 8-Pin Narrow SOIC
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SI4116DY-T1-GE3 Details

  • Manufacturer Part Number:

    SI4116DY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, SOP-8

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    12.7 A

  • Drain-source On Resistance-Max:

    0.0086 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Pure Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI4116DY-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI4116DY-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a thermal pad size of 2.5 mm x 2.5 mm.
  • To ensure the SI4116DY-T1-GE3 operates within its SOA, ensure the maximum voltage rating is not exceeded, and the device is not exposed to excessive temperatures, currents, or power dissipation. Refer to the datasheet for specific SOA guidelines.
  • A combination of thermal vias, thermal pads, and a heat sink can be used to effectively manage the thermal performance of the SI4116DY-T1-GE3. Ensure the thermal interface material (TIM) has a thermal conductivity of at least 1 W/m-K.
  • Yes, the SI4116DY-T1-GE3 is suitable for high-reliability applications due to its robust design, high-temperature rating, and compliance with industry standards such as AEC-Q101 and IATF 16949.
  • To troubleshoot issues with the SI4116DY-T1-GE3, start by verifying the device is properly soldered, and the PCB layout meets the recommended footprint. Then, check for voltage and current overstress, and ensure the device is operating within its SOA. Consult the datasheet and application notes for further guidance.

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SI4116DY-T1-GE3 Overview

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Part Image SI4116DY-T1-GE3 Vishay Siliconix

Small Signal Field-Effect Transistor, 12.7A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET