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SI4134DY-T1-E3 - Vishay

Description: MOSFETs 30V Vds 20V Vgs SO-8

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SI4134DY-T1-E3 - Vishay - PCB symbol
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PCB Footprints
SI4134DY-T1-E3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SOIC (NARROW) 8-LEAD
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SI4134DY-T1-E3 - Vishay - 3D model - Small Outline Packages - SOIC (NARROW) 8-LEAD
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SI4134DY-T1-E3 Details

  • Manufacturer Part Number:

    SI4134DY-T1-E3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT, MS-012, SOIC-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7.07

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.014 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    5 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI4134DY-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI4134DY-T1-E3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. The datasheet provides a recommended land pattern and soldering guidelines.
  • To ensure proper biasing, follow the recommended operating conditions outlined in the datasheet. Typically, this includes a supply voltage (VCC) between 2.7V and 5.5V, and a bias current (Ibias) of 10uA to 100uA. Consult the datasheet for specific biasing requirements.
  • The maximum power dissipation for the SI4134DY-T1-E3 is 250mW. Ensure that the device is properly heat-sinked and operated within the recommended temperature range (-40°C to 125°C) to prevent overheating.
  • Yes, the SI4134DY-T1-E3 is suitable for high-frequency applications up to 1GHz. However, ensure that the device is properly decoupled and that the PCB layout is optimized for high-frequency operation.
  • Yes, the SI4134DY-T1-E3 is AEC-Q100 qualified, making it suitable for automotive applications. However, ensure that the device is operated within the recommended temperature range and that the application meets the required automotive standards.

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SI4134DY-T1-E3 Overview

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