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SI4174DY-T1-GE3 - Vishay

Description: MOSFET 30V Vds 20V Vgs SO-8

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SI4174DY-T1-GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SOIC (NARROW) 8-LEAD
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SI4174DY-T1-GE3 - Vishay  - 3D model - Small Outline Packages - SOIC (NARROW) 8-LEAD
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SI4174DY-T1-GE3 Details

  • Manufacturer Part Number:

    SI4174DY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7.2

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    17 A

  • Drain-source On Resistance-Max:

    0.0095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    5 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI4174DY-T1-GE3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the SI4174DY-T1-GE3 involves keeping the input and output traces separate, using a solid ground plane, and minimizing the length of the input and output traces. Additionally, it's recommended to use a common-mode choke or a ferrite bead to filter out high-frequency noise.
  • To ensure proper biasing, make sure to follow the recommended voltage and current ratings specified in the datasheet. Typically, the SI4174DY-T1-GE3 requires a single 5V supply voltage and a bias current of around 10mA. It's also important to ensure the input and output impedance matching for optimal performance.
  • The SI4174DY-T1-GE3 has a maximum junction temperature of 150°C. To prevent overheating, ensure good airflow around the device, use a heat sink if necessary, and avoid operating the device at maximum power for extended periods. It's also important to follow the recommended thermal derating guidelines specified in the datasheet.
  • To troubleshoot common issues with the SI4174DY-T1-GE3, start by checking the PCB layout and ensuring that the input and output impedance matching is correct. Verify that the device is properly biased and that the power supply is stable. Use an oscilloscope to check for oscillations or instability, and consider adding decoupling capacitors or a ferrite bead to filter out high-frequency noise.
  • The SI4174DY-T1-GE3 has built-in ESD protection, but it's still important to follow proper handling and storage procedures to prevent damage. Use an anti-static wrist strap or mat when handling the device, and store the device in an anti-static bag or container. Avoid touching the device's pins or exposing it to high-voltage sources.

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SI4174DY-T1-GE3 Overview

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