FDS6673BZ Model Download Search Results
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FDS6673BZ
Rochester Electronics
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1 | P-Channel 30 V 14.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC | Small Outline Packages | FDS6673BZ |
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FDS6673BZ
onsemi
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1 | Extended VGS range (-25V) for battery applications ; High performance trench technology for extremely low rDS(on) ; RoHS compliant ; Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A ; Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A ; High power and current handling capability ; HBM ESD protection level of 6.5kV typical (note 3) | Small Outline Packages | FDS6673BZ |
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FDS6673BZ
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 14.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDS6673BZ |
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FDS6673BZ-F085
onsemi
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1 | P-Channel PowerTrench® MOSFET -30V, -14.5A, 7.8mΩ, SO 8L NB, 2500-REEL, Automotive Qualified | FDS6673BZ-F085 |
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FDS6673BZ_F085
onsemi
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1 | -30V, -14.5A, 7.8mΩ, SO-8 P-Channel PowerTrench®, SO 8L NB, 5000-TAPE REEL | FDS6673BZ_F085 |
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FDS6673BZ_F085
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 14.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FDS6673BZ_F085 |
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FDS6673BZ-G
onsemi
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1 | Small Signal Field-Effect Transistor, 14.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | FDS6673BZ-G |
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![Part Image](["https://componentsearchengine.com/2D/0T/21130068.1.1.png",null,"//content.supplyframe.com/images/process/fit-in/100x100/p/sot23_8.jpg"])
![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/sot23_8.jpg"])
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