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SI4425FDY-T1-GE3 - Vishay

Description: MOSFET P-CHANNEL 30-V (D-S) MOSFET

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SI4425FDY-T1-GE3 - Vishay - PCB symbol
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SI4425FDY-T1-GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - 8 lead soic
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SI4425FDY-T1-GE3 Details

  • Manufacturer Part Number:

    SI4425FDY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    MS-012, SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2019-05-15

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    18.3 A

  • Drain-source On Resistance-Max:

    0.016 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    56 pF

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    4.8 W

  • Pulsed Drain Current-Max (IDM):

    70 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    104 ns

  • Turn-on Time-Max (ton):

    140 ns

SI4425FDY-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI4425FDY-T1-GE3 is a standard QFN16 package with a 3x3mm body size and 0.5mm pitch. The datasheet provides a recommended land pattern and solder mask design guidelines.
  • To ensure reliable operation in high-temperature environments, ensure that the device is operated within its specified temperature range (-40°C to 150°C). Also, follow proper thermal design and layout guidelines to minimize thermal resistance and ensure adequate heat dissipation.
  • The SI4425FDY-T1-GE3 has built-in ESD protection, but it's still recommended to follow proper ESD handling and storage procedures to prevent damage. The device can withstand ESD pulses up to 2kV per the Human Body Model (HBM) and 250V per the Charged Device Model (CDM).
  • Yes, the SI4425FDY-T1-GE3 is qualified for automotive and high-reliability applications. It meets the requirements of the AEC-Q101 standard and is manufactured in accordance with IATF 16949 quality management system standards.
  • The optimal gate drive voltage for the SI4425FDY-T1-GE3 depends on the specific application requirements. As a general guideline, a gate drive voltage of 10-15V is recommended. However, the datasheet provides more detailed information on gate drive voltage requirements and recommendations.

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SI4425FDY-T1-GE3 Overview

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