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SI4435DY - onsemi

Description: High power and current handling capability ; -8.8 A, -30 V  - RDS(ON) = 20 mΩ @ VGS = -10 V  - RDS(ON) = 35 mΩ @ VGS = -4.5 V ; Fast switching speed ; Low gate charge (17nC typical) ; High performance trench technology for extremely low RDS(ON)

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SI4435DY - onsemi - PCB symbol
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PCB Footprints
SI4435DY - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC8
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3D Models
SI4435DY - onsemi - 3D model - Small Outline Packages - SOIC8
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SI4435DY Details

  • Manufacturer Part Number:

    SI4435DY

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SO-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    8.8 A

  • Drain-source On Resistance-Max:

    0.02 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI4435DY Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the RF traces short and away from the digital lines. Use a common mode choke or ferrite bead to filter the power supply lines.
  • Use a 1/4 wavelength monopole antenna or a dipole antenna with a 50-ohm impedance. Keep the antenna away from the PCB edges and other components. Use an antenna tuner or a matching network to optimize the impedance matching.
  • The maximum transmit power is dependent on the antenna gain and the regulatory requirements. Typically, the SI4435DY can achieve up to +20 dBm (100 mW) transmit power with a suitable antenna and impedance matching.
  • Use the built-in frequency synthesizer to generate the desired frequency hopping sequence. Configure the device to switch between different frequency channels using the SPI interface. Ensure that the frequency hopping sequence complies with the regulatory requirements.
  • A 26 MHz or 27 MHz crystal oscillator is recommended for the SI4435DY. This frequency range provides optimal performance and ensures compliance with the regulatory requirements.

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SI4435DY Overview

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SI4435DY Alternates

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Part Image SI4435DY Vishay Siliconix

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Part Image SI4435DY Fairchild Semiconductor Corporation

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For a full list of alternate parts for SI4435DY, check out Findchips.com