Part Image

SI4435FDY-T1-GE3 - Vishay

Description: MOSFET -30V Vds 20V Vgs SO-8

Download SI4435FDY-T1-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SI4435FDY-T1-GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SOIC (NARROW) 8-LEAD
click to zoom
3D Models
SI4435FDY-T1-GE3 - Vishay  - 3D model - Small Outline Packages - SOIC (NARROW) 8-LEAD
click to zoom

SI4435FDY-T1-GE3 Details

  • Manufacturer Part Number:

    SI4435FDY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2017-03-22

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    12.6 A

  • Drain-source On Resistance-Max:

    0.019 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    150 pF

  • JESD-30 Code:

    R-PDSO-G8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    4.8 W

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    70 ns

  • Turn-on Time-Max (ton):

    110 ns

SI4435FDY-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI4435FDY-T1-GE3 is a 5-pin SOT23 package with a 1.6mm x 2.9mm body size. The recommended land pattern is available in the Vishay Intertechnologies' application note AN10343.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet. Additionally, ensure that the device is operated within the recommended operating temperature range of -55°C to 150°C, and that the maximum junction temperature (Tj) is not exceeded.
  • The recommended soldering profile for the SI4435FDY-T1-GE3 is a peak temperature of 260°C for a maximum of 10 seconds. It is recommended to follow the soldering guidelines provided in the JEDEC standard J-STD-020.
  • The SI4435FDY-T1-GE3 is a moisture-sensitive device and should be stored in a dry environment with a relative humidity of less than 30%. During shipping, the devices should be packaged in a sealed bag with a desiccant to maintain a low humidity environment.
  • The SI4435FDY-T1-GE3 is a sensitive device and requires proper ESD protection during handling and assembly. It is recommended to follow the ESD protection guidelines provided in the ANSI/ESD S20.20 standard.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SI4435FDY-T1-GE3 Overview

Use the download button to access the SI4435FDY-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI443, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SI4435FDY-T1-GE3

Showing 0 results