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SI4463CDY-T1-GE3 - Vishay

Description: MOSFET

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SI4463CDY-T1-GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SOIC (NARROW): 8-LEAD_1
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SI4463CDY-T1-GE3 - Vishay  - 3D model - Small Outline Packages - SOIC (NARROW): 8-LEAD_1
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SI4463CDY-T1-GE3 Details

  • Manufacturer Part Number:

    SI4463CDY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    18.6 A

  • Drain-source On Resistance-Max:

    0.008 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    830 pF

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    5 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    180 ns

  • Turn-on Time-Max (ton):

    130 ns

SI4463CDY-T1-GE3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the SI4463CDY-T1-GE3 involves keeping the RF traces as short as possible, using a solid ground plane, and placing the device near the antenna. It's also recommended to use a 4-layer PCB with a dedicated ground plane and to avoid routing signals under the device.
  • To ensure reliable communication in a noisy environment, use a robust modulation scheme like GFSK or OOK, and implement error correction mechanisms like CRC and FEC. Additionally, use a high-quality antenna and ensure proper antenna tuning. It's also recommended to implement frequency hopping and adaptive frequency agility to mitigate interference.
  • The maximum transmit power of the SI4463CDY-T1-GE3 is +13 dBm, but this can be limited by the antenna and the PCB design. It's recommended to use a high-gain antenna and optimize the PCB layout to achieve the maximum transmit power.
  • The SI4463CDY-T1-GE3 has a built-in low-power mode that can be enabled by setting the device to sleep mode. In sleep mode, the device consumes only 0.2 μA of current. To implement low-power mode, use the SPI interface to set the device to sleep mode and wake it up only when necessary.
  • The maximum data rate of the SI4463CDY-T1-GE3 is 1 Mbps, but this can be limited by the modulation scheme and the channel bandwidth. It's recommended to use a high-data-rate modulation scheme like GFSK or OQPSK to achieve the maximum data rate.

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SI4463CDY-T1-GE3 Overview

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