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SI4464DY-T1-E3 - Vishay

Description: SI4464DY-T1-E3, N-channel MOSFET Transistor 1.7A 200V, 8-Pin SOIC

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SI4464DY-T1-E3 - Vishay - PCB symbol
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PCB Footprints
SI4464DY-T1-E3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SOIC (NARROW) 8-LEAD
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SI4464DY-T1-E3 - Vishay - 3D model - Small Outline Packages - SOIC (NARROW) 8-LEAD
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SI4464DY-T1-E3 Details

  • Manufacturer Part Number:

    SI4464DY-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    0.45 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    1.7 A

  • Drain-source On Resistance-Max:

    0.24 Ω

  • FET Technology:

    TRENCH MOSFET

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.5 W

  • Pulsed Drain Current-Max (IDM):

    8 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    50 ns

  • Turn-on Time-Max (ton):

    35 ns

SI4464DY-T1-E3 Frequently Asked Questions (FAQs)

  • Vishay provides a recommended PCB layout and land pattern in their application note AN883, which can be found on their website. It's essential to follow these guidelines to ensure optimal performance and minimize thermal resistance.
  • Vishay recommends following the J-STD-020D.1 standard for soldering and rework. Additionally, it's essential to use a soldering iron with a temperature range of 250°C to 260°C and a solder with a melting point of 217°C to 220°C.
  • The SI4464DY-T1-E3 has an operating temperature range of -55°C to 150°C. However, it's essential to note that the device's performance and reliability may degrade if operated at the extreme ends of this range for extended periods.
  • The SI4464DY-T1-E3 is an electrostatic-sensitive device (ESD). Handle the device by the body, avoid touching the pins, and store it in an anti-static bag or wrap it in anti-static material to prevent damage.
  • The SI4464DY-T1-E3 has a thermal resistance of 2.5°C/W. To ensure optimal thermal performance, use a heat sink with a thermal interface material, and ensure good airflow around the device. Avoid blocking the airflow or using a heat sink with a high thermal resistance.

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SI4464DY-T1-E3 Overview

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Power Field-Effect Transistor, 1.7A I(D), 200V, 0.24ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, MS-012AA
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Power Field-Effect Transistor, 1.7A I(D), 200V, 0.24ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, MS-012AA