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SI4464DY-T1-GE3 - Vishay

Description: MOSFETs 200V Vds 20V Vgs SO-8

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SI4464DY-T1-GE3 - Vishay - PCB symbol
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SI4464DY-T1-GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SOIC (NARROW) 8-LEAD
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SI4464DY-T1-GE3 - Vishay - 3D model - Small Outline Packages - SOIC (NARROW) 8-LEAD
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SI4464DY-T1-GE3 Details

  • Manufacturer Part Number:

    SI4464DY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    0.45 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    1.7 A

  • Drain-source On Resistance-Max:

    0.24 Ω

  • FET Technology:

    TRENCH MOSFET

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.5 W

  • Pulsed Drain Current-Max (IDM):

    8 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    50 ns

  • Turn-on Time-Max (ton):

    35 ns

SI4464DY-T1-GE3 Frequently Asked Questions (FAQs)

  • Vishay provides a recommended PCB layout and land pattern in their application note AN883, which can be found on their website. It's essential to follow these guidelines to ensure optimal performance and minimize parasitic effects.
  • The antenna design plays a crucial role in the performance of the SI4464DY-T1-GE3. Vishay recommends using a 1/4 wavelength monopole antenna or a chip antenna, and provides guidelines for antenna design in their application note AN883. Additionally, simulation tools like ANSYS HFSS or CST Studio Suite can be used to optimize the antenna design.
  • The SI4464DY-T1-GE3 is rated for operation from -40°C to +125°C. However, it's essential to consider the thermal management of the device, especially in high-power or high-temperature applications, to ensure reliable operation.
  • To ensure EMC, it's essential to follow proper PCB design and layout practices, such as using a solid ground plane, minimizing trace lengths, and using shielding or filtering components. Additionally, the device should be placed in a shielded enclosure, and the system should be tested for EMC compliance according to relevant standards.
  • Vishay recommends using a combination of ceramic and electrolytic capacitors for power supply decoupling, as well as a pi-filter or a common-mode choke to filter out noise and ensure a stable power supply. The application note AN883 provides more detailed guidelines.

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SI4464DY-T1-GE3 Overview

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Power Field-Effect Transistor, 1.7A I(D), 200V, 0.24ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, MS-012AA
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Power Field-Effect Transistor, 1.7A I(D), 200V, 0.24ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, MS-012AA
Part Image SI4464DY-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 1.7A I(D), 200V, 0.24ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, MS-012AA