Please enter a minimum 3 letters or numbers
Technical Content
Part Image

SI4465ADY-T1-E3 - Vishay

Description: VISHAY - SI4465ADY-T1-E3 - MOSFET, P CH, -8V, 0.0075OHM, -20A, SOIC

Download SI4465ADY-T1-E3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
SI4465ADY-T1-E3 - Vishay - PCB symbol
click to zoom
PCB Footprints
SI4465ADY-T1-E3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SI4465ADY-T1-E3
click to zoom
3D Models
SI4465ADY-T1-E3 - Vishay - 3D model - Small Outline Packages - SI4465ADY-T1-E3
click to zoom

SI4465ADY-T1-E3 Details

  • Manufacturer Part Number:

    SI4465ADY-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    MS-012, SOIC, SOP-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    8 V

  • Drain Current-Max (ID):

    13.7 A

  • Drain-source On Resistance-Max:

    0.009 Ω

  • FET Technology:

    TRENCH MOSFET

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    425 ns

  • Turn-on Time-Max (ton):

    305 ns

SI4465ADY-T1-E3 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the RF traces as short as possible and use 50-ohm impedance matching to minimize signal reflections.
  • Implement frequency hopping, use a robust modulation scheme like GFSK or OQPSK, and consider using error correction codes like FEC or CRC. Also, ensure proper antenna design and placement.
  • The maximum transmit power is +13 dBm, but this may vary depending on the specific application and regulatory requirements. Ensure compliance with local regulations and standards.
  • Optimize the receiver sensitivity by adjusting the LNA gain, using a high-quality antenna, and minimizing noise sources in the system. Also, consider using a pre-amplifier or a low-noise amplifier.
  • The recommended operating temperature range is -40°C to +85°C. However, the device can operate up to +105°C with reduced performance and reliability.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SI4465ADY-T1-E3 Overview

Use the download button to access the SI4465ADY-T1-E3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI446, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SI4465ADY-T1-E3

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑

SI4465ADY-T1-E3 Alternates

Showing results

Image Part Number Model
Part Image SI4465ADY-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 13.7A I(D), 8V, 0.009ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET, MS-012AA