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SI4532DY - onsemi

Description: High power and current handling capability in a widely used surface mount package ; Dual (N & P-Channel) MOSFET in surface mountpackage ; High density cell design for extremely low RDS(ON) ; P-Channel  -3.5 A,-30V  RDS(ON) = 0.085 Ω @ VGS = -10V  RDS(ON) = 0.190 Ω @ VGS = -4.5V ; N-Channel  3.9 A, 30V  RDS(ON) = 0.065 Ω @ VGS = 10V  RDS(ON) = 0.095 Ω @ VGS = 4.5V

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SI4532DY - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC8 CASE 751EB ISSUE A
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3D Models
SI4532DY - onsemi  - 3D model - Small Outline Packages - SOIC8 CASE 751EB ISSUE A
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SI4532DY Details

  • Manufacturer Part Number:

    SI4532DY

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOIC-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.32

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    3.9 A

  • Drain-source On Resistance-Max:

    0.065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI4532DY Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the input and output traces short and away from each other to minimize noise and coupling.
  • Ensure the input voltage (VIN) is within the recommended range (2.7V to 5.5V). Use a stable voltage regulator and decoupling capacitors (e.g., 10uF and 100nF) to minimize noise and ripple.
  • The maximum current draw is typically around 150mA, but this can vary depending on the specific application and operating conditions. Consult the datasheet for more information.
  • Use ESD protection devices (e.g., TVS diodes) and overvoltage protection circuits (e.g., voltage regulators with overvoltage protection) to prevent damage from electrostatic discharge and voltage surges.
  • The recommended operating temperature range is -40°C to 125°C. However, the device can operate up to 150°C with reduced performance and reliability.

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SI4532DY Overview

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Part Image SI4532DY Rochester Electronics LLC

3.9A, 30V, 0.065ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, SO-8

Part Image SI4532DY Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 3.9A I(D), 30V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SI4532DYS62Z Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 3.9A I(D), 30V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SI4532DYL99Z Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 3.9A I(D), 30V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SI4532DYD84Z Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 3.9A I(D), 30V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

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