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SI4559ADY-T1-GE3 - Vishay

Description: MOSFET N/P-Ch MOSFET 60V 58/120mohm @ 10V

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SI4559ADY-T1-GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - 8-Pin Narrow SOIC
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SI4559ADY-T1-GE3 Details

  • Manufacturer Part Number:

    SI4559ADY-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, SOP-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    6.1 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    4.3 A

  • Drain-source On Resistance-Max:

    0.058 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    3.4 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI4559ADY-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended land pattern for the SI4559ADY-T1-GE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendation for QFN Packages' (document number 37977).
  • The thermal pad on the bottom of the SI4559ADY-T1-GE3 should be connected to a solid ground plane on the PCB to ensure optimal thermal performance. A thermal via or a thermal pad on the PCB is recommended to dissipate heat efficiently.
  • The maximum operating temperature range for the SI4559ADY-T1-GE3 is -40°C to 150°C. However, the device can be operated up to 175°C for a limited time (less than 1000 hours) with reduced performance and reliability.
  • Yes, the SI4559ADY-T1-GE3 is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q100 and is PPAP capable. However, it's essential to consult with Vishay Intertechnologies' sales team or a qualified distributor for specific requirements and documentation.
  • The recommended soldering profile for the SI4559ADY-T1-GE3 follows the IPC/JEDEC J-STD-020 standard. A peak temperature of 260°C (500°F) and a dwell time of 20-40 seconds are recommended. However, it's essential to consult the datasheet and application notes for specific guidance.

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SI4559ADY-T1-GE3 Overview

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Part Image SI4559ADY-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 4.3A I(D), 60V, 0.058ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SI4559ADY-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 4.3A I(D), 60V, 0.058ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SI4559ADY-T1-E3 Vishay Intertechnologies

Power Field-Effect Transistor, 4.3A I(D), 60V, 0.058ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET